Paper Title :New Semiconductor Material GAAS+NISB For Nanoelectronics
Author :Sabir Aitchojin, Boris Akanaev, Askar Akanayev
Article Citation :Sabir Aitchojin ,Boris Akanaev ,Askar Akanayev ,
(2016 ) " New Semiconductor Material GAAS+NISB For Nanoelectronics " ,
International Journal of Advances in Science, Engineering and Technology(IJASEAT) ,
pp. 185-188,
Volume-4,Issue-2, Spl. Iss-2
Abstract : Along with a detailed description of the new technology of obtaining new semiconductor material GaAs+NiSb and
study of its crystal and physical properties, the possibility of using this material in high power gigahertz electronics, solar
energy converters, semiconductor quantum dot lasers is considered. Computer simulations of devices on this material are
presented.
Index Terms- Bridgman method, GAAS+NISB, Photovoltaics, QD laser, Computer simulations.
Type : Research paper
Published : Volume-4,Issue-2, Spl. Iss-2
DOIONLINE NO - IJASEAT-IRAJ-DOIONLINE-4703
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Copyright: © Institute of Research and Journals
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Published on 2016-06-14 |
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