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Paper Title :
The Effects of Sulfurization Pressure on Conversion Efficiency of Cu (In, Ga) (S, Se) Thin Film Solar Cell

Author :Peng-Cheng, Huang, Chia-Chi, Sung

Article Citation :Peng-Cheng ,Huang ,Chia-Chi ,Sung , (2017 ) " The Effects of Sulfurization Pressure on Conversion Efficiency of Cu (In, Ga) (S, Se) Thin Film Solar Cell " , International Journal of Advances in Science, Engineering and Technology(IJASEAT) , pp. 14-17, Volume-5, Issue-1, Spl. Iss-3

Abstract : Cu (In, Ga) (S, Se) (CIGSSe) thin film solar cell have been prepared by sputtering-selenization method with sulfurization process using sulfur powder (without toxic H 2 S gas) in a tube type resistance furnace to form CIGSSe reaction layer. Themorphology of the CIGSSe film becomes smoothly and densely uniform when increasing sulfurization pressure. The sulfur concentration of S/(Se+S) ratio slightly increase from 0.277 to 0.310 with rising the sulfurization pressure value due to the long gas residence time accelerate the reaction rate.A maximum solar cell efficiency of 12.7% was achieved at760 Torr. Keywords: Sulfurization, Sputtering-Selenization, Rapid Thermal Annealing, CIGSSe.

Type : Research paper

Published : Volume-5, Issue-1, Spl. Iss-3


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