International Journal of Advances in Science, Engineering and Technology(IJASEAT)
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Volume-8,Issue-3  ( Jul, 2020 )
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Submitted Papers : 80
Accepted Papers : 10
Rejected Papers : 70
Acc. Perc : 12%
  Journal Paper

Paper Title
New Semiconductor Material GAAS+NISB For Nanoelectronics

Along with a detailed description of the new technology of obtaining new semiconductor material GaAs+NiSb and study of its crystal and physical properties, the possibility of using this material in high power gigahertz electronics, solar energy converters, semiconductor quantum dot lasers is considered. Computer simulations of devices on this material are presented. Index Terms- Bridgman method, GAAS+NISB, Photovoltaics, QD laser, Computer simulations.

Author - Sabir Aitchojin, Boris Akanaev, Askar Akanayev

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| Published on 2016-06-14
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