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Paper Title :
New Semiconductor Material GAAS+NISB For Nanoelectronics

Author :Sabir Aitchojin, Boris Akanaev, Askar Akanayev

Article Citation :Sabir Aitchojin ,Boris Akanaev ,Askar Akanayev , (2016 ) " New Semiconductor Material GAAS+NISB For Nanoelectronics " , International Journal of Advances in Science, Engineering and Technology(IJASEAT) , pp. 185-188, Volume-4,Issue-2, Spl. Iss-2

Abstract : Along with a detailed description of the new technology of obtaining new semiconductor material GaAs+NiSb and study of its crystal and physical properties, the possibility of using this material in high power gigahertz electronics, solar energy converters, semiconductor quantum dot lasers is considered. Computer simulations of devices on this material are presented. Index Terms- Bridgman method, GAAS+NISB, Photovoltaics, QD laser, Computer simulations.

Type : Research paper

Published : Volume-4,Issue-2, Spl. Iss-2


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