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Volume-9,Issue-3  ( Jul, 2021 )
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Paper Title :
Thermal Diffusivity Measurement Of Porous Silicon Layer (P-Type) Using Photo-Acoustic Technique

Author :Mohammed Jabbar Hussein, W. Mahmood Mat Yunus, Alimah Mohamed kamari, Azmi Zakaria

Article Citation :Mohammed Jabbar Hussein ,W. Mahmood Mat Yunus ,Alimah Mohamed kamari ,Azmi Zakaria , (2015 ) " Thermal Diffusivity Measurement Of Porous Silicon Layer (P-Type) Using Photo-Acoustic Technique " , International Journal of Advances in Science, Engineering and Technology(IJASEAT) , pp. 65-68, Volume-3, Issue-3

Abstract : Thermal diffusivity for porous silicon p-type was measured using the photoacoustic technique. The porous silicon samples were prepared under the current densities of 10 to 30 mA/cm2 whilst the etching time ranged from 20 to 80 min. The thermal diffusivity of the porous silicon was obtained by graph fitting. Findings from measurement showed that the thermal diffusivity decreased with increasing etching time and current densities. Keywords-Etching Time, Thermal Diffusivity, Current Densities, Porous Silicon, Photoacoustic

Type : Research paper

Published : Volume-3, Issue-3


DOIONLINE NO - IJASEAT-IRAJ-DOIONLINE-2587   View Here

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