Thermal Diffusivity Measurement Of Porous Silicon Layer (P-Type) Using Photo-Acoustic Technique
Thermal diffusivity for porous silicon p-type was measured using the photoacoustic technique. The porous silicon
samples were prepared under the current densities of 10 to 30 mA/cm2 whilst the etching time ranged from 20 to 80 min. The
thermal diffusivity of the porous silicon was obtained by graph fitting. Findings from measurement showed that the thermal
diffusivity decreased with increasing etching time and current densities.
Keywords-Etching Time, Thermal Diffusivity, Current Densities, Porous Silicon, Photoacoustic