Photoluminescence Study of Carriers Confinement and Thermal Stability of INAS/INP (001) Quantum Dots Emitting Near 1.3 µM
Photoluminescence Spectroscopy (PLS) measurements have been performed on self-organized InAs quantum dots
(QDs) grown on InP(001) nominal substrate. The lowest full width at half maximum (FWHM) of the PL spectrum measured
at low temperature and at high excitation power, indicates the good carrier confinement and low size dispersion of
InAs/InP(001) QDs. Through the excitation power-PL measurements with the help of an explicit low, which express the
variation of PL intensity with the excitation power, we have evidenced the presence of two families of InAs QDs which have
a good carrier confinement and an emission wavelength around 1.3 μm. This result gives the possibility to use this sample in
optical telecommunications and in infrared photodetectors sensitive on broad spectral bands.
Keywords- Photoluminescence, Quantum dots, Self-organized Growth, Optical Telecommunication.